1 2 3 collect or 3 1 base 2 emitter http://www.secosgmbh.com elektronische bauelemente k j c h l a b s g v 3 1 2 d top view dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 mmbt440 3 any changing of specification will not be informed individual pnp silicon switching transistor 01 -jun-2004 rev. b page 1 of 4 marking: 2t maximum ratings* t a =25 unless otherwise noted symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector dissipation 0.3 w t j , t stg junction and storage te mperature -55-150 electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=-100 a , i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v , i e =0 -0.1 a collector cut-off current i ceo v ce =-35 v , i b =0 -0.1 a emitter cut-off current i ebo v eb =-4v , i c =0 -0.1 a dc current gain h fe v ce =-2 v, i c = -150ma 100 300 collector-emitter saturation voltage v ce(sat) i c =-150 ma, i b =-15ma -0.4 v base-emitter saturation voltage v be(sat) i c =- 150 ma, i b =-15ma -0.95 v transition frequency f t v ce = -10v, i c = -20ma f = 100mhz 200 mhz rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual mmbt440 3 p np silicon switching transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 2 of 4 figure 3. capacitances reverse voltage (volts) 7.0 10 20 30 5.0 figure 4. charge data i c , collector current (ma) 0.1 2.0 5.0 10 20 2.0 30 capacitance (pf) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 5. turn?on time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) c eb q t q a 25 c 100 c transient characteristics 3.0 1.00.50.30.2 0.3 0.2 30 t s , storage time (ns) t, time (ns) c cb 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 0.7 7.0 30 t r , rise time (ns) i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s - 1/8 t f
any changing of specification will not be informed individual MMBT4403 p np silicon switching transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 3 of 4 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 8. frequency effects f, frequency (khz) small?signa l characteristics nois e figure v ce = ?10 vdc, t a = 2 5 5 c; bandwidth = 1.0 hz nf , noise figure (db) i c = 1.0 ma, r s = 430 i c = 500 a, r s = 560 i c = 50 a, r s = 2.7 k i c = 100 a, r s = 1.6 k r s = optimum source resist ance 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 nf , noise figure (db) figure 9. source resistance effects r s , source resist ance (ohms) f = 1 khz i c = 50 a 100 a 500 a 1.0 ma h p a r a m e t e r s v c e = 1 0 v d c , f = 1 . 0 k h z , t a = 2 5 5 c t h i s g r o u p o f g r a p h s i l l u s t r a t e s t h e r e l a t i o n s h i p b e t w e e n h f e a n d o t h e r a h o p a r a m e t e r s f o r t h i s s e r i e s o f t r a n s i s t o r s . t o o b t a i n t h e s e c u r v e s , a h i g h - g a i n a n d a l o w - g a i n u n i t w e r e s e l e c t e d f r o m t h e m m b t 4 4 0 3 l i n e s , a n d t h e s a m e u n i t s w e r e u s e d t o d e v e l o p t h e c o r r e s p o n d i n g l y n u m b e r e d c u r v e s o n e a c h g r a p h . f i g u r e 1 0 . c u r r e n t g a i n i c , c o l l e c t o r c u r r e n t ( m a d c ) 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 3 0 0 7 0 0 3 0 2 0 0 1 0 0 1 0 0 0 h f e , c u r r e n t g a i n h i e , i n p u t i m p e d a n c e ( o h m s ) f i g u r e 1 1 . i n p u t i m p e d a n c e i c , c o l l e c t o r c u r r e n t ( m a d c ) 1 0 0 k 1 0 0 5 0 5 . 0 7 . 0 2 0 k 1 0 k 5 k 2 k 1 k 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 5 . 0 7 . 0 f i g u r e 1 2 . v o l t a g e f e e d b a c k r a t i o i c , c o l l e c t o r c u r r e n t ( m a d c ) 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 0 . 1 2 0 f i g u r e 1 3 . o u t p u t a d m i t t a n c e i c , c o l l e c t o r c u r r e n t ( m a d c ) 5 0 0 1 . 0 5 . 0 7 . 0 5 0 2 0 1 0 5 . 0 2 . 0 5 . 0 2 . 0 1 . 0 0 . 5 0 . 2 h , o u t p u t a d m i t t a n c e ( m h o s ) o e h , v o l t a g e f e e d b a c k r a t i o ( x 1 0 ) r e - 4 m m b t 4 4 0 3 u n i t 1 m m b t 4 4 0 3 u n i t 2 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 5 . 0 7 . 0 5 0 0 7 0 5 0 k 5 0 0 2 0 0 1 0 1 0 0 m m b t 4 4 0 3 u n i t 1 m m b t 4 4 0 3 u n i t 2 m m b t 4 4 0 3 u n i t 1 m m b t 4 4 0 3 u n i t 2 m m b t 4 4 0 3 u n i t 1 m m b t 4 4 0 3 u n i t 2
any changing of specification will not be informed individual mmbt440 3 p np silicon switching transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 4 of 4 st a tic characteristics figure 14. dc current gain i c , collect or current (ma) figure 15. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collect or-emitter vol t age (vol ts) 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma 0.07 0.05 0.03 0.02 0.01 10 ma 100 ma 10 20 30 0.3 0.5 0.7 1.0 3.0 0.1 h , normalized current gain 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 fe t j = 125 c -55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 16. aono v oltages i c , collect or current (ma) 0.4 0.6 0.8 1.0 0.2 figure 17. t emperature coefficients i c , collect or current (ma) vol t age (vol ts) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(sat) @ v ce = 10 v vc for v ce(sat) vs for v be 200 0.1 0.2 0.5 coefficient (mv/ c) 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 500 ma 0.005
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